onsemi

FDMS86181 PowerTrench® MOSFET

onsemi offers higher efficiency and lower switching noise for improved EMI and thermal performance with its FDMS86181 MOSFET

Image of Fairchild's FDMS86181 PowerTrench® MOSFETonsemi helped pioneer trench MOSFETs in the early 1990s and they have been perfecting MOSFET technology and manufacturing since then to develop a large portfolio of thousands of products for any application.

onsemi's FDMS86181 advanced 100 V shielded gate PowerTrench MOSFET is the latest in this rich family with what is currently the lowest RDS(ON) and Qrr in its class and fastest reverse recovery while delivering the highest efficiency. FDMS86181 has little to no voltage overshoot, reduces voltage ringing, and improves EMI for applications requiring a 100 V-rated MOSFET for power supplies and motor drives. Its increased power density allows wider MOSFET de-rating so designers do not have to overdesign.

FDMS86181 is the first in a family with multiple voltage and package options coming soon.

Features
  • 50% reduction in Qrr minimizes ringing and eliminates snubbers - lower than its best competitor
  • 40% reduction in RDS(ON) improves efficiency - making it the industry’s current lowest in 100 V class (a reduction over onsemi's previous version, which was an industry best)
  • 45% lower Irrm reduces EMI 
  • Better FOM for efficient fast switching
  • Best-in-class P- and N-channel technology
  • Higher operating temperatures

FDMS86181 PowerTrench MOSFET

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
MOSFET N-CH 100V 44A/124A 8PQFNFDMS86181MOSFET N-CH 100V 44A/124A 8PQFN5784 - Immediate$23.73View Details
Published: 2016-03-22

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