Field Stop (FS) IGBT Technology

ON Semiconductor FS IGBT technology enables designers to develop highly reliable systems with higher input voltage while offering optimum performance where low conduction and switching losses are essential. The IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution and a wide safe operating area. The increased breakdown voltage improves reliability where negative ambient temperatures are present. As the temperature decreases, the IGBT and FRD blocking voltage also decreases making the devices particularly beneficial for PV solar inverters used in colder climates. Because careful selection of IGBTs and free-wheeling diodes are essential for maximum efficiency, ON Semiconductor IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

ON Semiconductor FS technology achieves high performance without sacrificing reliability or ruggedness, and are committed to continued advancement in IGBT performance. Our fourth-generation technology development enables excellent trade-off characteristics and dynamic latch-up ruggedness stronger than any other FS IGBTs.

White Paper - Detailed analysis and performance results