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uP1966E: 80 V Half-Bridge Gate Driver for GaN FETs
EPC and uPI Semiconductor partner to offer GaN solutions with uP1966 for cost-effective and fast time to market of GaN-based designs
The uP1966E, sold by EPC, is designed to drive both high-side and low-side GaN FETs in half-bridge topologies, operating at several MHz on both channels. This high-speed performance ensures efficient and reliable operation, making it ideal for applications requiring fast switching.
Features
- 0.4 Ω/0.7 Ω pull-down/pull-up resistance
- Fast propagation delays (20 ns, typical)
- Fast rise and fall times (8 ns/4 ns, typical)
- Adjustable output for turn-on/turn-off ability
- CMOS-compatible input logic (independent of supply voltage)
- Undervoltage lockout for supply input
Applications
- DC/DC converters
- Datacenters
- AI servers
- Synchronous rectification for AC/DC and DC/DC
- Point of load converters
- Class-D audio
- LED lighting
uP1966E 80 V Half Bridge Gate Driver for GaN FETs
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
 |  | UP1966E | IC GATE DRVR HALF-BRIDGE 12WLCSP | 240661 - Immediate | $18.77 | View Details |
Published: 2024-10-08
Hong Kong, China