EPC2069 40 V, 2.25 mΩ GaN FET

The EPC EPC2069 40 V, 2.25 mΩ, 422 A pulsed-current GaN FET offers designers a significantly smaller and more efficient device than silicon MOSFETs for high-performance, space-constrained applications. This GaN FET is ideal for applications with demanding requirements for high power density performance, such as 48 V to 54 V input servers. Lower gate charges and zero reverse recovery losses enable high-frequency operation of 1 MHz and beyond in a tiny 10.6 mm² footprint for state-of-the-art power density. The EPC2069 can support 48 V to 12 V_DC/DC solutions ranging from 500 W to 2 kW and exceeding 98% efficiency. The use of eGaN devices on both the primary side and the secondary side is required to achieve maximum power density >4,000 W/in³.