Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IRFB4110PBFXKMA1 TRENCH >=100V Infineon Technologies	900 In Stock	1 : $25.19000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	4.5mOhm @ 75A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	9620 pF @ 50 V	-	370W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFB4110PBF MOSFET N-CH 100V 120A TO220AB Infineon Technologies	12,216 In Stock	1 : $20.33000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	4.5mOhm @ 75A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	9620 pF @ 50 V	-	370W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
UMWIRFB4110 MOSFET N-CH 100V 120A TO220AB UMW	884 In Stock	1 : $23.38000 Tube	*	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	4.5mOhm @ 75A, 10V	4V @ 250µA	-	±20V	-	-	370W (Tc)	-55°C ~ 155°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFB4110GPBF MOSFET N-CH 100V 120A TO220AB Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	4.5mOhm @ 75A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	9620 pF @ 50 V	-	370W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.