VideoLibrary

ROHM Semi 2 N-Channel MOSFET | DigiKey Daily

ROHM Semiconductor's 2 N-channel SIC power MOSFET module is rated up to 1.2 kV Vdss and 200 A ld, this power module is ideal for high current and high power switching. Because of its low switching loss, it's ideal for applications including sustainable power, motor driving, or power inversion/conversion. Find ROHM Semiconductor's 2 N-channel SIC MOSFET at DigiKey today! http://www.digikey.com/product-search/en?keywords=BSM300D12P2E001

4/1/2016 8:39:45 PM

ROHM Semi 2 N-Channel MOSFET DigiKey Daily

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
MOSFET 2N-CH 1200V 300A MODULEBSM300D12P2E001MOSFET 2N-CH 1200V 300A MODULE0 - Immediate$5,848.42View Details

Related Videos

High accuracy current monitoring contributes to improved application reliability
High accuracy current monitoring contributes to improved application reliability

Publish Date: 2023-06-22

Midnite Solar's Inverters and Charger Systems
Midnite Solar's Inverters and Charger Systems

Publish Date: 2023-02-06

ROHM's SiC Power and Gate Driver Solutions
ROHM's SiC Power and Gate Driver Solutions

Publish Date: 2023-02-06

Related Product Highlight

Industrial Power Solutions ROHM’s reliable portfolio of power solutions includes a variety of applications within the industrial sector from SiC MOSFETs and gate drivers to IPMs and shunt resistors. Learn more at DigiKey today.
SiC Schottky Barrier Diodes ROHM’s SiC Schottky barrier diodes are AEC-Q101 qualified for automotive use.
SiC Power MOSFETs ROHM’s silicon carbide (SiC) MOSFETs come in a variety of ON resistances and voltage (VDSS) ratings of 650 V, 1,200 V, or 1,700 V.

Related Articles and Blogs

Wide Bandgap Semiconductors Are Reshaping the Transportation World The entire transportation sector is undergoing a radical transformation with solutions for electric and hybrid cars and cleaner mass transportation.
Wide Band Gap Semiconductors in Aerospace and Satellite Applications Wide Band Gap semiconductors bring several advantages in power conversion, such as increased power density and efficiency, and reducing system size and weight.
How to Correctly Apply the Right Power Devices to Meet Industrial Power Supply Requirements By correctly applying the right power components for industrial power supplies and converters, designers can ensure the necessary performance and reliability.

Related Product Training Modules

High-Power Devices for EV DC Fast-Charging Stations ROHM's power device offerings for DC fast-charging stations include silicon carbide (SiC), insulated gate bipolar transistor (IGBT), and super junction MOSFETs.
Industrial Motor Products: Part 1 - Power Devices/Gate Drivers ROHM’s power devices and gate drivers are optimized for industrial motor end applications.
SiC Trench MOSFETs Minimal reverse recovery behavior of the parasitic diode and supports high-speed switching.