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SiC Gate Drivers
onsemi
This presentation will introduce onsemi's NCP51561 5 kV isolation silicon carbide, silicon junction MOSFET gate driver. It will discuss turning on and off a silicon junction MOSFET versus a silicon carbide MOSFET. Gate driver undervoltage lockout will be explained relative to the Miller plateau region of both silicon junction and silicon carbide MOSFETs. It will also explain the benefits of the NCP51561 negative bias driving silicon carbide MOSFETs during turn off. Finally, this module will explore a first-order approximation for gate drive strength calculation for the NTH4L022N120M3S 1200 V, 22 mΩ silicon carbide MOSFET.
Related Parts
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
 |  | NCP51561DADWR2G | DGTL ISO 5KV 2CH GATE DVR 16SOIC | 279 - Immediate 17000 - Factory Stock | $30.13 | View Details |
| | NCP51561BADWR2G | DGTL ISO 5KV 2CH GATE DVR 16SOIC | 800 - Immediate | $30.13 | View Details |
| | NCP51561BBDWR2G | DGTL ISO 5KV 2CH GATE DVR 16SOIC | 481 - Immediate | $30.13 | View Details |
| | NCP51561DBDWR2G | DGTL ISO 5KV 2CH GATE DVR 16SOIC | 767 - Immediate 2000 - Factory Stock | $30.13 | View Details |
|  | NTH4L022N120M3S | SIC MOS TO247-4L 22MOHM 1200V | 723 - Immediate 152550 - Factory Stock | $142.21 | View Details |
PTM Published on: 2023-05-16
Hong Kong, China