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SiC Gate Drivers

onsemi

This presentation will introduce onsemi's NCP51561 5 kV isolation silicon carbide, silicon junction MOSFET gate driver. It will discuss turning on and off a silicon junction MOSFET versus a silicon carbide MOSFET. Gate driver undervoltage lockout will be explained relative to the Miller plateau region of both silicon junction and silicon carbide MOSFETs. It will also explain the benefits of the NCP51561 negative bias driving silicon carbide MOSFETs during turn off. Finally, this module will explore a first-order approximation for gate drive strength calculation for the NTH4L022N120M3S 1200 V, 22 mΩ silicon carbide MOSFET.

Related Parts

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
DGTL ISO 5KV 2CH GATE DVR 16SOICNCP51561DADWR2GDGTL ISO 5KV 2CH GATE DVR 16SOIC304 - Immediate$41.74View Details
DGTL ISO 5KV 2CH GATE DVR 16SOICNCP51561BADWR2GDGTL ISO 5KV 2CH GATE DVR 16SOIC898 - Immediate$30.21View Details
DGTL ISO 5KV 2CH GATE DVR 16SOICNCP51561BBDWR2GDGTL ISO 5KV 2CH GATE DVR 16SOIC513 - Immediate$41.74View Details
DGTL ISO 5KV 2CH GATE DVR 16SOICNCP51561DBDWR2GDGTL ISO 5KV 2CH GATE DVR 16SOIC792 - Immediate$41.74View Details
SIC MOS TO247-4L 22MOHM 1200VNTH4L022N120M3SSIC MOS TO247-4L 22MOHM 1200V963 - Immediate$141.10View Details
PTM Published on: 2023-05-16

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