Paralleling eGaN FETs

Paralleling eGaN® FETs

EPC

This presentation will detail the work EPC has done to make it as easy as possible to use eGaN FETs in power conversion applications where more than one device working in parallel is needed to meet the output power requirements. These challenges will be presented and recommendations made to ensure the best performance from a paralleled switch converter. The discussion will focus on a single gate driver per switch and the half bridge topology.

Related Parts

ImageManufacturer Part NumberDescriptionDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CAvailable QuantityPrice
GANFET N-CH 40V 33A DIE OUTLINEEPC2015GANFET N-CH 40V 33A DIE OUTLINE40 V33A (Ta)0 - ImmediateSee Page for PricingView Details
GANFET N-CH 100V 25A DIE OUTLINEEPC2001GANFET N-CH 100V 25A DIE OUTLINE100 V25A (Ta)0 - ImmediateSee Page for PricingView Details
GANFET N-CH 200V 12A DIEEPC2010GANFET N-CH 200V 12A DIE200 V12A (Ta)0 - ImmediateSee Page for PricingView Details
GANFET N-CH 40V 10A DIE OUTLINEEPC2014GANFET N-CH 40V 10A DIE OUTLINE40 V10A (Ta)0 - ImmediateSee Page for PricingView Details
GANFET N-CH 200V 3A DIEEPC2012GANFET N-CH 200V 3A DIE200 V3A (Ta)0 - ImmediateSee Page for PricingView Details
GANFET N-CH 100V 6A DIE OUTLINEEPC2007GANFET N-CH 100V 6A DIE OUTLINE100 V6A (Ta)0 - Immediate$6.99View Details
PTM Published on: 2012-04-26

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