C2D10120D
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C3M0120065D

DigiKey Part Number
1697-C3M0120065D-ND
Manufacturer
Manufacturer Product Number
C3M0120065D
Description
650V 120M SIC MOSFET
Customer Reference
Detailed Description
N-Channel 650 V 22A (Tc) 98W (Tc) Through Hole TO-247-3
Datasheet
 Datasheet
EDA/CAD Models
C3M0120065D Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Obsolete
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
157mOhm @ 6.76A, 15V
Vgs(th) (Max) @ Id
3.6V @ 1.86mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 15 V
Vgs (Max)
+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds
640 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
98W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
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In-Stock: 535
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This product is no longer manufactured and will no longer be stocked once stock is depleted. View Substitutes
All prices are in HKD
Tube
QuantityUnit PriceExt Price
1$81.41000$81.41
10$63.26300$632.63
30$57.96167$1,738.85
120$53.23225$6,387.87
270$51.20881$13,826.38
510$49.91465$25,456.47
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.