SUP60N06-12P-GE3 Vishay Siliconix | Discrete Semiconductor Products

SUP60N06-12P-GE3 is Obsolete and no longer manufactured.

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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SUP60N06-12P-GE3
DigiKey Part Number	SUP60N06-12P-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SUP60N06-12P-GE3
Description	MOSFET N-CH 60V 60A TO220AB
Customer Reference
Detailed Description	N-Channel 60 V 60A (Tc) 3.25W (Ta), 100W (Tc) Through Hole TO-220AB
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	12mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1970 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	3.25W (Ta), 100W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	SUP60