SIHP23N60E-GE3
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SUP60030E-GE3

DigiKey Part Number
SUP60030E-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SUP60030E-GE3
Description
MOSFET N-CH 80V 120A TO220AB
Manufacturer Standard Lead Time
28 Weeks
Customer Reference
Detailed Description
N-Channel 80 V 120A (Tc) 375W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
SUP60030E-GE3 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
TrenchFET®
Packaging
Bulk
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
141 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7910 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SUP60030
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In-Stock: 900
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Quantity
All prices are in HKD
Bulk
QuantityUnit PriceExt Price
1$33.26000$33.26
50$16.96940$848.47
100$15.38890$1,538.89
500$12.61884$6,309.42
1,000$11.72904$11,729.04
2,000$11.31900$22,638.00
Manufacturers Standard Package