Name: SIZF906BDT-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SIZF906BDT-T1-GE3TR-ND
Price: 22.72 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIZF906BDT-T1-GE3
DigiKey Part Number	742-SIZF906BDT-T1-GE3TR-ND - Tape & Reel (TR) 742-SIZF906BDT-T1-GE3CT-ND - Cut Tape (CT) 742-SIZF906BDT-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIZF906BDT-T1-GE3
Description	MOSFET 2N-CH 30V 36A 8POWERPAIR
Manufacturer Standard Lead Time	14 Weeks
Customer Reference
Detailed Description	Mosfet Array 30V 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc) 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) Surface Mount 8-PowerPair® (6x5)
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual), Schottky
FET Feature	-
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Rds On (Max) @ Id, Vgs	2.1mOhm @ 15A, 10V, 0.68mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V, 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1630pF @ 15V, 5550pF @ 15V
Power - Max	4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	8-PowerPair® (6x5)
Base Product Number	SIZF906