Name: SISS76LDN-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SISS76LDN-T1-GE3TR-ND
Price: 14.65 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SISS76LDN-T1-GE3
DigiKey Part Number	742-SISS76LDN-T1-GE3TR-ND - Tape & Reel (TR) 742-SISS76LDN-T1-GE3CT-ND - Cut Tape (CT) 742-SISS76LDN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISS76LDN-T1-GE3
Description	MOSFET N-CH 70V 19.6A/67.4A PPAK
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 70 V 19.6A (Ta), 67.4A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8SH
Datasheet	Datasheet
EDA/CAD Models	SISS76LDN-T1-GE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	70 V
Current - Continuous Drain (Id) @ 25°C	19.6A (Ta), 67.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	3.3V, 4.5V
Rds On (Max) @ Id, Vgs	6.25mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id	1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33.5 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2780 pF @ 35 V
FET Feature	-
Power Dissipation (Max)	4.8W (Ta), 57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8SH
Package / Case	PowerPAK® 1212-8SH
Base Product Number	SISS76