Name: SISS08DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS08DN-T1-GE3TR-ND
Price: 18.17 HKD
Availability: InStock

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SISS08DN-T1-GE3
DigiKey Part Number	SISS08DN-T1-GE3TR-ND - Tape & Reel (TR) SISS08DN-T1-GE3CT-ND - Cut Tape (CT) SISS08DN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISS08DN-T1-GE3
Description	MOSFET N-CH 25V 53.9/195.5A PPAK
Manufacturer Standard Lead Time	55 Weeks
Customer Reference
Detailed Description	N-Channel 25 V 53.9A (Ta), 195.5A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.2V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V
Series TrenchFET® Gen IV	Vgs (Max) +20V, -16V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 3670 pF @ 12.5 V
Part Status Active	Power Dissipation (Max) 5W (Ta), 65.7W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 25 V	Supplier Device Package PowerPAK® 1212-8S
Current - Continuous Drain (Id) @ 25°C 53.9A (Ta), 195.5A (Tc)	Package / Case PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SISS08
Rds On (Max) @ Id, Vgs 1.23mOhm @ 15A, 10V

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SISS08DN-T1-GE3