Name: SISH536DN-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SISH536DN-T1-GE3TR-ND
Price: 7.41 HKD
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SISH536DN-T1-GE3
DigiKey Part Number	742-SISH536DN-T1-GE3TR-ND - Tape & Reel (TR) 742-SISH536DN-T1-GE3CT-ND - Cut Tape (CT) 742-SISH536DN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISH536DN-T1-GE3
Description	N-CHANNEL 30 V (D-S) MOSFET POWE
Manufacturer Standard Lead Time	14 Weeks
Customer Reference
Detailed Description	N-Channel 30 V 24.7A (Ta), 67.4A (Tc) 3.57W (Ta), 26.5W (Tc) Surface Mount PowerPAK® 1212-8SH
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET® Gen V
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	24.7A (Ta), 67.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	3.57W (Ta), 26.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8SH
Package / Case	PowerPAK® 1212-8SH