Name: SIR1309DP-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SIR1309DP-T1-GE3TR-ND
Price: 12.58 HKD
Availability: InStock

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SIR1309DP-T1-GE3
DigiKey Part Number	742-SIR1309DP-T1-GE3TR-ND - Tape & Reel (TR) 742-SIR1309DP-T1-GE3CT-ND - Cut Tape (CT) 742-SIR1309DP-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIR1309DP-T1-GE3
Description	P-CHANNEL 30 V (D-S) MOSFET POWE
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	P-Channel 30 V 19.1A (Ta), 65.7A (Tc) 4.8W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8
Datasheet	Datasheet
EDA/CAD Models	SIR1309DP-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 7.3mOhm @ 10A, 10V
Mfr Vishay Siliconix	Vgs(th) (Max) @ Id 2.5V @ 250µA
Series TrenchFET® Gen IV	Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) ±25V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 3250 pF @ 15 V
FET Type P-Channel	Power Dissipation (Max) 4.8W (Ta), 56.8W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 30 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 19.1A (Ta), 65.7A (Tc)	Supplier Device Package PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Package / Case PowerPAK® SO-8