
SIHD2N80AE-GE3 | |
---|---|
DigiKey Part Number | 742-SIHD2N80AE-GE3-ND |
Manufacturer | |
Manufacturer Product Number | SIHD2N80AE-GE3 |
Description | MOSFET N-CH 800V 2.9A DPAK |
Manufacturer Standard Lead Time | 15 Weeks |
Customer Reference | |
Detailed Description | N-Channel 800 V 2.9A (Tc) 62.5W (Tc) Surface Mount TO-252AA |
Datasheet | Datasheet |
Type | Description | Select All |
---|---|---|
Category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 800 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 2.9Ohm @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 62.5W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-252AA | |
Package / Case | ||
Base Product Number |
Quantity | Unit Price | Ext Price |
---|---|---|
1 | $11.77000 | $11.77 |
10 | $7.56500 | $75.65 |
100 | $6.10400 | $610.40 |
500 | $4.87400 | $2,437.00 |
1,000 | $4.45631 | $4,456.31 |
3,000 | $4.02043 | $12,061.29 |
6,000 | $3.71599 | $22,295.94 |
12,000 | $3.62208 | $43,464.96 |