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SIHB6N65E-GE3 is out of stock and can be placed on backorder.
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SIHB6N65E-GE3 | |
|---|---|
DigiKey Part Number | SIHB6N65E-GE3-ND |
Manufacturer | |
Manufacturer Product Number | SIHB6N65E-GE3 |
Description | MOSFET N-CH 650V 7A D2PAK |
Manufacturer Standard Lead Time | 20 Weeks |
Customer Reference | |
Detailed Description | N-Channel 650 V 7A (Tc) 78W (Tc) Surface Mount TO-263 (D2PAK) |
Datasheet | Datasheet |
Product Attributes
Type | Description | Select All |
|---|---|---|
Category | ||
Mfr | ||
Series | - | |
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 600mOhm @ 3A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 820 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 78W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-263 (D2PAK) | |
Package / Case | ||
Base Product Number |
0 In Stock
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Quantity
All prices are in HKD
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | $21.90000 | $21.90 |
| 10 | $14.10100 | $141.01 |
| 100 | $9.67590 | $967.59 |
| 500 | $7.78302 | $3,891.51 |
| 1,000 | $7.17476 | $7,174.76 |
| 2,000 | $6.66335 | $13,326.70 |
| 5,000 | $6.37980 | $31,899.00 |
Hong Kong, China