TO-263-3
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TO-263-3
TO-263-3

SIHB20N50E-GE3

DigiKey Part Number
SIHB20N50E-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHB20N50E-GE3
Description
MOSFET N-CH 500V 19A D2PAK
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 500 V 19A (Tc) 179W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Bulk
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
184mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1640 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
179W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB20
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In-Stock: 2,282
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Quantity
All prices are in HKD
Bulk
QuantityUnit PriceExt Price
1$20.03000$20.03
10$18.17100$181.71
100$13.81910$1,381.91
500$12.11122$6,055.61