TO-263-3
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TO-263-3
TO-263-3

SIHB15N60E-GE3

DigiKey Part Number
SIHB15N60E-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHB15N60E-GE3
Description
MOSFET N-CH 600V 15A D2PAK
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 15A (Tc) 180W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Bulk
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
280mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
180W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB15
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In-Stock: 1,097
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Quantity
All prices are in HKD
Bulk
QuantityUnit PriceExt Price
1$33.67000$33.67
10$22.12900$221.29
100$15.57790$1,557.79
500$12.78108$6,390.54
1,000$11.88304$11,883.04
2,000$11.49540$22,990.80
Manufacturers Standard Package