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SIHB12N65E-GE3 | |
|---|---|
DigiKey Part Number | SIHB12N65E-GE3-ND |
Manufacturer | |
Manufacturer Product Number | SIHB12N65E-GE3 |
Description | MOSFET N-CH 650V 12A D2PAK |
Manufacturer Standard Lead Time | 22 Weeks |
Customer Reference | |
Detailed Description | N-Channel 650 V 12A (Tc) 156W (Tc) Surface Mount TO-263 (D2PAK) |
Datasheet | Datasheet |
Product Attributes
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Category | Vgs(th) (Max) @ Id 4V @ 250µA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V |
Packaging Tube | Vgs (Max) ±30V |
Part Status Active | Input Capacitance (Ciss) (Max) @ Vds 1224 pF @ 100 V |
FET Type | Power Dissipation (Max) 156W (Tc) |
Technology | Operating Temperature -55°C ~ 150°C (TJ) |
Drain to Source Voltage (Vdss) 650 V | Mounting Type Surface Mount |
Current - Continuous Drain (Id) @ 25°C | Supplier Device Package TO-263 (D2PAK) |
Drive Voltage (Max Rds On, Min Rds On) 10V | Package / Case |
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V | Base Product Number |
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In-Stock: 2,816
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Quantity
All prices are in HKD
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | $31.82000 | $31.82 |
| 50 | $16.08280 | $804.14 |
| 100 | $14.55370 | $1,455.37 |
| 500 | $11.87398 | $5,936.99 |
| 1,000 | $11.01319 | $11,013.19 |
| 2,000 | $10.28966 | $20,579.32 |
| 5,000 | $9.73116 | $48,655.80 |
