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TO-263-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TO-263-3
TO-263-3

SIHB12N60E-GE3

DigiKey Part Number
SIHB12N60E-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHB12N60E-GE3
Description
MOSFET N-CH 600V 12A D2PAK
Manufacturer Standard Lead Time
15 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 12A (Tc) 147W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Bulk
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
937 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
147W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB12
Product Questions and Answers

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Quantity
All prices are in HKD
Bulk
QuantityUnit PriceExt Price
1$10.04000$10.04
10$9.99400$99.94
100$9.32030$932.03
500$8.30444$4,152.22
1,000$7.51228$7,512.28
2,000$7.12550$14,251.00
5,000$6.91559$34,577.95
Manufacturers Standard Package