Name: SIHB11N80AE-GE3
Brand: Vishay Siliconix
SKU: 742-SIHB11N80AE-GE3-ND
Price: 22.09 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHB11N80AE-GE3
DigiKey Part Number	742-SIHB11N80AE-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHB11N80AE-GE3
Description	MOSFET N-CH 800V 8A D2PAK
Manufacturer Standard Lead Time	20 Weeks
Customer Reference
Detailed Description	N-Channel 800 V 8A (Tc) 78W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet
EDA/CAD Models	SIHB11N80AE-GE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	804 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2PAK)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number	SIHB11