Name: SIA477EDJT-T1-GE3
Brand: Vishay Siliconix
SKU: SIA477EDJT-T1-GE3TR-ND
Price: 7.48 HKD
Availability: InStock

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SIA477EDJT-T1-GE3
DigiKey Part Number	SIA477EDJT-T1-GE3TR-ND - Tape & Reel (TR) SIA477EDJT-T1-GE3CT-ND - Cut Tape (CT) SIA477EDJT-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIA477EDJT-T1-GE3
Description	MOSFET P-CH 12V 12A PPAK SC70-6
Manufacturer Standard Lead Time	38 Weeks
Customer Reference
Detailed Description	P-Channel 12 V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
Datasheet	Datasheet
EDA/CAD Models	SIA477EDJT-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 1V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V
Series TrenchFET® Gen III	Vgs (Max) ±8V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 3050 pF @ 6 V
Part Status Active	Power Dissipation (Max) 19W (Tc)
FET Type P-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 12 V	Supplier Device Package PowerPAK® SC-70-6 Single
Current - Continuous Drain (Id) @ 25°C 12A (Tc)	Package / Case PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V	Base Product Number SIA477
Rds On (Max) @ Id, Vgs 13mOhm @ 5A, 4.5V

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SIA477EDJT-T1-GE3