SI2308BDS-T1-E3 Vishay Siliconix | Discrete Semiconductor Products

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SI2308BDS-T1-E3
DigiKey Part Number	SI2308BDS-T1-E3TR-ND - Tape & Reel (TR) SI2308BDS-T1-E3CT-ND - Cut Tape (CT) SI2308BDS-T1-E3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI2308BDS-T1-E3
Description	MOSFET N-CH 60V 2.3A SOT23-3
Customer Reference
Detailed Description	N-Channel 60 V 2.3A (Tc) 1.09W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	156mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.8 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	190 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	1.09W (Ta), 1.66W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	SI2308