Name: IRFIB6N60APBF
Brand: Vishay Siliconix
SKU: IRFIB6N60APBF-ND
Price: 26.18 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRFIB6N60APBF
DigiKey Part Number	IRFIB6N60APBF-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	IRFIB6N60APBF
Description	MOSFET N-CH 600V 5.5A TO220-3
Manufacturer Standard Lead Time	15 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 5.5A (Tc) 60W (Tc) Through Hole TO-220-3
Datasheet	Datasheet
EDA/CAD Models	IRFIB6N60APBF Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	750mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3 Full Pack, Isolated Tab
Base Product Number	IRFIB6