SIHP23N60E-GE3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRFBE30PBF

DigiKey Part Number
IRFBE30PBF-ND
Manufacturer
Manufacturer Product Number
IRFBE30PBF
Description
MOSFET N-CH 800V 4.1A TO220AB
Manufacturer Standard Lead Time
15 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
IRFBE30PBF Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
Base Product Number
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

In-Stock: 1,099
Check for Additional Incoming Stock
All prices are in HKD
Tube
QuantityUnit PriceExt Price
1$16.30000$16.30
50$11.31900$565.95
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.