SIHP23N60E-GE3
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IRF630PBF

DigiKey Part Number
IRF630PBF-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
IRF630PBF
Description
MOSFET N-CH 200V 9A TO220AB
Manufacturer Standard Lead Time
15 Weeks
Customer Reference
Detailed Description
N-Channel 200 V 9A (Tc) 74W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
IRF630PBF Models
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
74W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRF630
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In-Stock: 4,596
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Quantity
All prices are in HKD
Tube
QuantityUnit PriceExt Price
1$8.56000$8.56
50$5.55000$277.50
100$5.53360$553.36
500$5.45980$2,729.90
1,000$5.14500$5,145.00
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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