Name: TW092V65C,LQ
Brand: Toshiba Semiconductor and Storage
SKU: 264-TW092V65CLQTR-ND
Price: 184.25 HKD
Availability: InStock

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TW092V65C,LQ
DigiKey Part Number	264-TW092V65CLQTR-ND - Tape & Reel (TR) 264-TW092V65CLQCT-ND - Cut Tape (CT) 264-TW092V65CLQDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TW092V65C,LQ
Description	N-CH SIC MOSFET, 650 V, 0.092 OH
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 27A (Tc) 111W (Tc) Surface Mount 4-DFN-EP (8x8)
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	136mOhm @ 15A, 18V
Vgs(th) (Max) @ Id	5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 18 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	873 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	111W (Tc)
Operating Temperature	175°C
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	4-DFN-EP (8x8)
Package / Case	4-VSFN Exposed Pad