Name: TRS12E65H,S1Q
Brand: Toshiba Semiconductor and Storage
SKU: 264-TRS12E65H,S1Q-ND
Price: 23.12 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TRS12E65H,S1Q
DigiKey Part Number	264-TRS12E65H,S1Q-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TRS12E65H,S1Q
Description	DIODE SIL CARB 650V 12A TO220L
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	Diode 650 V 12A Through Hole TO-220-2L
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Mfr	Toshiba Semiconductor and Storage
Series	-
Packaging	Tube
Part Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	12A
Voltage - Forward (Vf) (Max) @ If	1.35 V @ 12 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	120 µA @ 650 V
Capacitance @ Vr, F	778pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220-2L
Operating Temperature - Junction	175°C