Name: TK3R3E08QM,S1X
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK3R3E08QMS1X-ND
Price: 26.1 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK3R3E08QM,S1X
DigiKey Part Number	264-TK3R3E08QMS1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK3R3E08QM,S1X
Description	UMOS10 TO-220AB 80V 3.3MOHM
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 80 V 120A (Tc) 230W (Tc) Through Hole TO-220
Datasheet	Datasheet
EDA/CAD Models	TK3R3E08QM,S1X Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSX-H
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	3.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7670 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	230W (Tc)
Operating Temperature	175°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3