Name: TK39N60X,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK39N60XS1F-ND
Price: 75.41 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK39N60X,S1F
DigiKey Part Number	TK39N60XS1F-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK39N60X,S1F
Description	MOSFET N-CH 600V 38.8A TO247
Manufacturer Standard Lead Time	20 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 38.8A (Ta) 270W (Tc) Through Hole TO-247
Datasheet	Datasheet
EDA/CAD Models	TK39N60X,S1F Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV-H
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	65mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs	85 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4100 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	270W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3
Base Product Number	TK39N60