Name: TK39J60W5,S1VQ
Brand: Toshiba Semiconductor and Storage
SKU: TK39J60W5S1VQ-ND
Price: 98.53 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK39J60W5,S1VQ
DigiKey Part Number	TK39J60W5S1VQ-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK39J60W5,S1VQ
Description	MOSFET N-CH 600V 38.8A TO3P
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 38.8A (Ta) 270W (Tc) Through Hole TO-3P(N)
Datasheet	Datasheet
EDA/CAD Models	TK39J60W5,S1VQ Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	65mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id	3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs	135 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4100 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	270W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-3P(N)
Package / Case	TO-3P-3, SC-65-3
Base Product Number	TK39J60