Name: TK17E65W,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK17E65WS1X-ND
Price: 39.35 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK17E65W,S1X
DigiKey Part Number	TK17E65WS1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK17E65W,S1X
Description	MOSFET N-CH 650V 17.3A TO220
Manufacturer Standard Lead Time	20 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 17.3A (Ta) 165W (Tc) Through Hole TO-220
Datasheet	Datasheet
EDA/CAD Models	TK17E65W,S1X Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	200mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id	3.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	165W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Base Product Number	TK17E65