Name: TK095N65Z5,S1F
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK095N65Z5S1F(S-ND
Price: 56.97 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK095N65Z5,S1F
DigiKey Part Number	264-TK095N65Z5S1F(S-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK095N65Z5,S1F
Description	650V DTMOS6-HIGH SPEED DIODE
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 29A (Ta) 230W (Tc) Through Hole TO-247
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSVI
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	29A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	95mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1.27mA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2880 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	230W (Tc)
Operating Temperature	150°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3