Name: TK090N65Z,S1F
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK090N65ZS1F-ND
Price: 60.02 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK090N65Z,S1F
DigiKey Part Number	264-TK090N65ZS1F-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK090N65Z,S1F
Description	MOSFET N-CH 650V 30A TO247
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 30A (Ta) 230W (Tc) Through Hole TO-247
Datasheet	Datasheet
EDA/CAD Models	TK090N65Z,S1F Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSVI
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	90mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 1.27mA
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2780 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	230W (Tc)
Operating Temperature	150°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3
Base Product Number	TK090N65