SSM3K315T(TE85L,F) Toshiba Semiconductor and Storage | Discrete Semiconductor Products

SSM3K315T(TE85L,F) is Obsolete and no longer manufactured.

Available Substitutes:

Similar

Toshiba Semiconductor and Storage

In Stock: 32,499

Unit Price: $3.70000

Similar

Diodes Incorporated

In Stock: 21,974

Unit Price: $3.79000

Similar

Nexperia USA Inc.

In Stock: 61,661

Unit Price: $2.06000

Similar

Nexperia USA Inc.

In Stock: 2,353

Unit Price: $5.60000

Similar

Taiwan Semiconductor Corporation

In Stock: 43,698

Unit Price: $4.94000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SSM3K315T(TE85L,F)
DigiKey Part Number	SSM3K315T(TE85LF)TR-ND - Tape & Reel (TR) SSM3K315T(TE85LF)CT-ND - Cut Tape (CT) SSM3K315T(TE85LF)DKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	SSM3K315T(TE85L,F)
Description	MOSFET N-CH 30V 6A TSM
Customer Reference
Detailed Description	N-Channel 30 V 6A (Ta) 700mW (Ta) Surface Mount TSM
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIV
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	27.6mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	10.1 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	450 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TSM
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	SSM3K315