Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
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RN1131MFV(TL3,T)

DigiKey Part Number
RN1131MFV(TL3T)CT-ND - Cut Tape (CT)
Manufacturer
Manufacturer Product Number
RN1131MFV(TL3,T)
Description
TRANS PREBIAS NPN 50V 0.1A VESM
Customer Reference
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
EDA/CAD Models
RN1131MFV(TL3,T) Models
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Manufacturer
Toshiba Semiconductor and Storage
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Packaging
Cut Tape (CT)
Current - Collector Cutoff (Max)
100nA (ICBO)
Part Status
Active
Power - Max
150 mW
Transistor Type
NPN - Pre-Biased
Mounting Type
Surface Mount
Current - Collector (Ic) (Max)
100 mA
Package / Case
SOT-723
Voltage - Collector Emitter Breakdown (Max)
50 V
Supplier Device Package
VESM
Resistors Included
R1 Only
Base Product Number
Resistor - Base (R1)
100 kOhms
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 2,997
Check for Additional Incoming Stock
Once available stock of this product has been depleted, manufacturer standard package and lead time will apply.
All prices are in HKD
Cut Tape (CT)
QuantityUnit PriceExt Price
1$1.56000$1.56
10$0.95400$9.54
100$0.59030$59.03
500$0.42932$214.66
1,000$0.37704$377.04
2,000$0.33293$665.86