Name: TSM60NE285CIT C0G
Brand: Taiwan Semiconductor Corporation
SKU: 1801-TSM60NE285CITC0G-ND
Price: 33.67 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TSM60NE285CIT C0G
DigiKey Part Number	1801-TSM60NE285CITC0G-ND
Manufacturer	Taiwan Semiconductor Corporation
Manufacturer Product Number	TSM60NE285CIT C0G
Description	MOSFET
Manufacturer Standard Lead Time	40 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 9.5A (Tc) 56W (Tc) Through Hole ITO-220TL
Datasheet	Datasheet
EDA/CAD Models	TSM60NE285CIT C0G Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Taiwan Semiconductor Corporation
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V, 12V
Rds On (Max) @ Id, Vgs	274mOhm @ 3.2A, 12V
Vgs(th) (Max) @ Id	6V @ 1.4mA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	894 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	56W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	ITO-220TL
Package / Case	TO-220-3 Full Pack