Name: SCT025W120G3AG
Brand: STMicroelectronics
SKU: 497-SCT025W120G3AG-ND
Price: 168.96 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SCT025W120G3AG
DigiKey Part Number	497-SCT025W120G3AG-ND
Manufacturer	STMicroelectronics
Manufacturer Product Number	SCT025W120G3AG
Description	AUTOMOTIVE-GRADE SILICON CARBIDE
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 56A (Tc) 388W (Tc) Through Hole HiP247™
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	STMicroelectronics
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	37mOhm @ 25A, 18V
Vgs(th) (Max) @ Id	4.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 18 V
Vgs (Max)	+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds	1990 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	388W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Through Hole
Supplier Device Package	HiP247™
Package / Case	TO-247-3