Name: RQ3E120BNTB
Brand: Rohm Semiconductor
SKU: RQ3E120BNTBTR-ND
Price: 7.89 HKD
Availability: InStock

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RQ3E120BNTB
DigiKey Part Number	RQ3E120BNTBTR-ND - Tape & Reel (TR) RQ3E120BNTBCT-ND - Cut Tape (CT) RQ3E120BNTBDKR-ND - Digi-Reel®
Manufacturer	Rohm Semiconductor
Manufacturer Product Number	RQ3E120BNTB
Description	MOSFET N-CH 30V 12A 8HSMT
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 30 V 12A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Datasheet	Datasheet
EDA/CAD Models	RQ3E120BNTB Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.5V @ 1mA
Mfr Rohm Semiconductor	Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) ±20V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 15 V
FET Type N-Channel	Power Dissipation (Max) 2W (Ta)
Technology MOSFET (Metal Oxide)	Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 30 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 12A (Ta)	Supplier Device Package 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Package / Case 8-PowerVDFN
Rds On (Max) @ Id, Vgs 9.3mOhm @ 12A, 10V	Base Product Number RQ3E120

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Tape & Reel (TR)

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RQ3E120BNTB