BSM600D12P3G001
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BSM600D12P3G001
ROHM's SiC Power and Gate Driver Solutions
4th Gen SiC MOSFETs

BSM600D12P3G001

DigiKey Part Number
846-BSM600D12P3G001-ND
Manufacturer
Manufacturer Product Number
BSM600D12P3G001
Description
MOSFET 2N-CH 1200V 600A MODULE
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
Mosfet Array 1200V (1.2kV) 600A (Tc) 2450W (Tc) Chassis Mount Module
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Manufacturer
Rohm Semiconductor
Series
-
Packaging
Bulk
Part Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
600A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
5.6V @ 182mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
31000pF @ 10V
Power - Max
2450W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
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Bulk
QuantityUnit PriceExt Price
1$14,694.12000$14,694.12