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PG-TO220-3-1
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPP60R099CPXKSA1

DigiKey Part Number
IPP60R099CPXKSA1-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IPP60R099CPXKSA1
Description
MOSFET N-CH 650V 31A TO220-3
Customer Reference
Detailed Description
N-Channel 650 V 31A (Tc) 255W (Tc) Through Hole PG-TO220-3
Datasheet
 Datasheet
EDA/CAD Models
IPP60R099CPXKSA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
CoolMOS™
Packaging
Tube
Part Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
99mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2800 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
255W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
IPP60R099
Product Questions and Answers

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Not recommended for new design, minimums may apply View Substitutes
Quantity
All prices are in HKD
Tube
QuantityUnit PriceExt Price
1$50.83000$50.83
50$31.54340$1,577.17
100$30.33640$3,033.64
500$25.17690$12,588.45
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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