Name: TP65H050WSQA
Brand: Renesas Electronics Corporation
SKU: 1707-TP65H050WSQA-ND
Price: 162.99 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TP65H050WSQA
DigiKey Part Number	1707-TP65H050WSQA-ND
Manufacturer	Renesas Electronics Corporation
Manufacturer Product Number	TP65H050WSQA
Description	GANFET N-CH 650V 36A TO247-3
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 36A (Tc) 150W (Tc) Through Hole TO-247-3
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Renesas Electronics Corporation
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
Base Product Number	TP65H050