NXH004P120M3F2PTHG
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NXH004P120M3F2PTHG
Enabling Future DCFC with onsemi’s EliteSiC Power Modules

NXH003P120M3F2PTHG

DigiKey Part Number
5556-NXH003P120M3F2PTHG-ND
Manufacturer
onsemi
Manufacturer Product Number
NXH003P120M3F2PTHG
Description
MOSFET 2N-CH 1200V 350A 36PIM
Manufacturer Standard Lead Time
10 Weeks
Customer Reference
Detailed Description
Mosfet Array 1200V (1.2kV) 350A (Tc) 979W (Tc) Chassis Mount 36-PIM (56.7x62.8)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Manufacturer
onsemi
Series
-
Packaging
Tray
Part Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
350A (Tc)
Rds On (Max) @ Id, Vgs
5mOhm @ 200A, 18V
Vgs(th) (Max) @ Id
4.4V @ 160mA
Gate Charge (Qg) (Max) @ Vgs
1195nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
20889pF @ 800V
Power - Max
979W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
36-PIM (56.7x62.8)
Base Product Number
NXH003
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In-Stock: 53
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Quantity
All prices are in HKD
Tray
QuantityUnit PriceExt Price
1$1,708.88000$1,708.88
20$1,609.74700$32,194.94
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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