NTHL1000N170M1 onsemi | Discrete Semiconductor Products

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NTHL1000N170M1
DigiKey Part Number	5556-NTHL1000N170M1-ND
Manufacturer	onsemi
Manufacturer Product Number	NTHL1000N170M1
Description	SILICON CARBIDE (SIC) MOSFET EL
Customer Reference
Detailed Description	N-Channel 1700 V 4.2A (Tc) 48W Through Hole TO-247-3
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	onsemi
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	1.43Ohm @ 2A, 20V
Vgs(th) (Max) @ Id	4.3V @ 640µA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 20 V
Vgs (Max)	+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	48W
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3