Name: NTH4L025N065SC1
Brand: onsemi
SKU: 5556-NTH4L025N065SC1-ND
Price: 170.73 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

NTH4L025N065SC1
DigiKey Part Number	5556-NTH4L025N065SC1-ND
Manufacturer	onsemi
Manufacturer Product Number	NTH4L025N065SC1
Description	SILICON CARBIDE (SIC) MOSFET - 1
Manufacturer Standard Lead Time	14 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 99A (Tc) 348W (Tc) Through Hole TO-247-4L
Datasheet	Datasheet
EDA/CAD Models	NTH4L025N065SC1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	onsemi
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	99A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	28.5mOhm @ 45A, 18V
Vgs(th) (Max) @ Id	4.3V @ 15.5mA
Gate Charge (Qg) (Max) @ Vgs	164 nC @ 18 V
Vgs (Max)	+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds	3480 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	348W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4