Bipolar (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Through Hole TO-220F-3
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KSD2012GTU

DigiKey Part Number
KSD2012GTU-ND
Manufacturer
onsemi
Manufacturer Product Number
KSD2012GTU
Description
TRANS NPN 60V 3A TO-220F-3
Manufacturer Standard Lead Time
9 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Through Hole TO-220F-3
Datasheet
 Datasheet
EDA/CAD Models
KSD2012GTU Models
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Tube
Part Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 2A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 500mA, 5V
Power - Max
25 W
Frequency - Transition
3MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F-3
Base Product Number
KSD2012
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In-Stock: 1,039
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Quantity
All prices are in HKD
Tube
QuantityUnit PriceExt Price
1$12.66000$12.66
50$5.97200$298.60
100$5.32100$532.10
500$4.17686$2,088.43
1,000$3.80853$3,808.53
2,000$3.49874$6,997.48
5,000$3.16355$15,817.75
10,000$2.99879$29,987.90
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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