
Type | Description | Select All |
---|---|---|
Category | ||
Manufacturer | IXYS | |
Series | - | |
Packaging | Tube | |
Part Status | Obsolete | |
Technology | Silicon Carbide (SiC) | |
Configuration | 2 N-Channel (Dual) | |
FET Feature | - | |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
Current - Continuous Drain (Id) @ 25°C | 55A (Tc) | |
Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V | |
Vgs(th) (Max) @ Id | 4V @ 15mA | |
Gate Charge (Qg) (Max) @ Vgs | 161nC @ 20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2790pF @ 1000V | |
Power - Max | - | |
Operating Temperature | -55°C ~ 150°C | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Package / Case | 9-SMD Power Module | |
Supplier Device Package | SMPD | |
Base Product Number |