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IXTP3N100P is out of stock and can be placed on backorder.
Available Substitutes:
Parametric Equivalent
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Product Attributes
Type | Description | Select All |
|---|---|---|
Category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 1000 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 4.8Ohm @ 1.5A, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 125W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-220-3 | |
Package / Case | ||
Base Product Number |
0 In Stock
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Quantity
All prices are in HKD
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | $45.24000 | $45.24 |
| 50 | $26.91560 | $1,345.78 |
| 100 | $23.41610 | $2,341.61 |
| 500 | $21.52350 | $10,761.75 |
| 1,000 | $21.17190 | $21,171.90 |
Hong Kong, China